{"id":112,"date":"2025-08-02T16:27:16","date_gmt":"2025-08-02T16:27:16","guid":{"rendered":"https:\/\/memristors.uib.es\/?page_id=112"},"modified":"2025-08-06T19:58:21","modified_gmt":"2025-08-06T17:58:21","slug":"research-videos","status":"publish","type":"page","link":"https:\/\/memristors.uib.es\/index.php\/resources\/our-youtube-videos\/research-videos\/","title":{"rendered":"Research videos"},"content":{"rendered":"\n

Those are our published videos in YouTube, using the account rpicos.uib@gmail.com:<\/p>\n\n\n\n

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LAEDC'2021 - An Introduction to Memristor Compact Modelling using Thermistors as a case study<\/a><\/h3><\/span><\/a>\n\t\t\t\t
This paper was presented at LAEDC'2021 (Latin American Electron Devices Conference), M\u00e9xico, in an online event on April 20, 2021.\n\n\n\nWe present here a short (very short because of the time limitation) introduction on how to model memristors using a unified modeling framework. We have used the thermistor as an example, and shown how it fits the definition of a memristor.\n\n\nMemristors were introduced by Leon Chua in 1971, and are widely considered to be one of the latest fundamental breakthrough in circuit theory. Their applications are also expected to be an important, key-factor in electronic circuit design. For instance, they already appear in many forms, like {PCA}, {ReRAM}, etc., to mention a few. However, due to the fact that memristors have appeared quite recently, technology is not yet mature enough to provide with readily available, off-the-shelf components. As a result, developing and testing new concepts or design architectures based on memristors, are accomplished mainly by using numerical simulation. \n\n\nIn this paper we have briefly presented the formal framework for memristor compact modeling. Based on this we have then shown that thermistor, a well-known device, can be given a twist and used as what it really is: as a memristor. Then we have gone through a standard analyzing procedure, checking that thermistors present the essential fingerprints. In specific, the pinched hysteresis loop, whose enclosed area tends to zero at high frequency, is presented; together with the Dynamic Route Map, a novel concept that has been applied to propose a new temperature measuring method, taking advantage of the memristive properties.<\/div><\/div>\n\t\t\n\n\t\t\n\t\t
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MOCAST'2021 - A Stochastic Switched Capacitor Memristor Emulator<\/a><\/h3><\/span><\/a>\n\t\t\t\t
by C. de Benito, O. Camps, M. M. Al Chawa, S. G. Stavrinides, and R. Picos\n\n\nAbstract: In this paper we present a mixed-signal circuit able to emulate the behavior of a memristive system. Specifically, we propose a memristor emulator design using a Switched Capacitor (SCME) plus a control part implemented using stochastic computing. The switched capacitor technique is used to implement a controllable resistor, which is controlled by signals generated using a stochastic computing implementation of a basic memristor equations.<\/div><\/div>\n\t\t\n\n\t\t\n\t\t
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MOCAST'2021 - A New Temperature-Based Model for the Reset Transition on ReRAM Memristive Devices<\/a><\/h3><\/span><\/a>\n\t\t\t\t
M. M. Al Chawa, R. Tetzlaffm S. G. Stavrinides, C. de Benito, R. Picos, "A New Temperature-Based Model for the Reset Transition on ReRAM Memristive Devices", Proc. MOCAST'2021, Thessaloniki, Greece, 2021\n\n\n\nAbstract:\n\n\n Memristive Devices can store information with no need for a power source, and are considered a promising technology for non-volatile memories . Leon Chua proposed in [1] the existence of the passive element called \u201cMemristor\u201d in 1971, mainly based on theoretical arguments. The original reasoning was based on a missing element relating the electric charge and the magnetic flux, that would complete the symmetry of passive electronic devices. This first definition has been extended later to include other elements whose resistance depended on a state variable [2,3].\n\n\nIn this work, we consider Resistive switching RAM (ReRAM) devices as memristors and we introduce a memristor model in flux-charge domain rather than the usually preferred voltage-current one. We employ the proposed model during the high resistance state of the device. We relate the parameters of the memristor model with a state variable, the temperature, by using a quasi-static thermal model. The emerging results using this simple model show a very good agreement with the experimental ones, correspondingly.\n\n\n[1] L. Chua, \u201cResistance switching memories are memristors,\u201d Applied Physics A, vol. 102, no. 4, pp. 765\u2013783, 2011.\n[2] M. M. Al Chawa, et al., \u2018\u2019A Simple Piecewise Model of Reset\/Set Transitions in Bipolar ReRAM Memristive Devices\u2019\u2019 IEEE Transactionson Circuits and Systems I: Regular Papers65, 10 (2018), 3469\u2013348, 2018\n[3] F. Corinto, et al., \u201cA theoretical approach to memristor devices,\u201d 2015.<\/div><\/div>\n\t\t\n\n\t\t\n\t\t
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MOCAST'22 - Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux<\/a><\/h3><\/span><\/a>\n\t\t\t\t
M. M. Al Chawa, C. de Benito, H. Castan, S. Due\u00f1as, S. G. Stavrinides, R. Tetzlaff , and R. Picos, "Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux", MOCAST'22\n\nIn this work, an empirical model based on a pure relation between charge and flux (aka an ideal memristor) has been proposed to fit the experimental data for ReRAM devices in flux charge domain. The model is able to capture the behavior with a very good accuracy, including also the behavior of the memconductance.<\/div><\/div>\n\t\t<\/div>
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Those are our published videos in YouTube, using the account rpicos.uib@gmail.com:<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":108,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-112","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/memristors.uib.es\/index.php\/wp-json\/wp\/v2\/pages\/112","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/memristors.uib.es\/index.php\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/memristors.uib.es\/index.php\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/memristors.uib.es\/index.php\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/memristors.uib.es\/index.php\/wp-json\/wp\/v2\/comments?post=112"}],"version-history":[{"count":4,"href":"https:\/\/memristors.uib.es\/index.php\/wp-json\/wp\/v2\/pages\/112\/revisions"}],"predecessor-version":[{"id":141,"href":"https:\/\/memristors.uib.es\/index.php\/wp-json\/wp\/v2\/pages\/112\/revisions\/141"}],"up":[{"embeddable":true,"href":"https:\/\/memristors.uib.es\/index.php\/wp-json\/wp\/v2\/pages\/108"}],"wp:attachment":[{"href":"https:\/\/memristors.uib.es\/index.php\/wp-json\/wp\/v2\/media?parent=112"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}